Impact of channel doping engineering on the high-frequency noise performance of junctionless In0.3Ga0.7As/GaAs FET: A numerical simulation study

In this paper, the channel doping engineering is proposed to improve the benchmarking parameters of the analog/radio frequency and the high frequency noise performance of the junctionless (JL)-In0.3Ga0.7As/GaAs device. The proposed structure is called shell doped of channel-JLFET (SDCh-JLFET). The sub-gate doped layer thickness (D) and middle of channel impurity concentration (N-middle) are considered as additional factors to improve the analog/radio frequency parameters and high frequency noise performance of device. The SDChJLFET with a channel length of 10 nm, D =1 nm, and N-middle = 2 x 10(17) cm(-3 )showed the transconductance of G(mmax) = 3mS/um, unity gain cut-off frequency of f(T) = 700 GHz, the minimum noise figure of N-fmin = 0.84 db and available associated gain of G(ass) = 28.5 db. The G(mmax), f(T), N-fmin and G(ass )parameters of the SDCh-JLFET device are improved by 76%, 36%, 35% and 26%, respectively, compared to JL-In0.3Ga0.7As/GaAs device without shell doping (JLFET) but with similar dimensions. The SDCh-JLFET device proposed in this paper can be a reasonable candidate for analog/radio frequency applications and high frequency noise.