Journal
OPTICAL AND QUANTUM ELECTRONICS
Volume 52, Issue 1, Pages -Publisher
SPRINGER
DOI: 10.1007/s11082-019-2137-9
Keywords
HgCdTe; Infrared photodetectors; FDTD simulations; Focal plane arrays; Multiphysics simulations
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In state-of-the-art, large format, HgCdTe-based infrared focal plane arrays the typical pixel size (3-10 mu m) is of the order of the operating wavelength and much smaller than the carrier diffusion length. This makes inter-pixel crosstalk a limiting factor, especially in planar structures. Employing three-dimensional electromagnetic and electrical simulations we show that, besides reducing the dark current through Auger suppression, majority carrier depletion of the detector absorber is also effective in curtailing the inter-pixel crosstalk due to carrier diffusion. In the case of a 5 mu m-pitch pixel, a proper design of the absorber composition and doping profile allows to reduce inter-pixel crosstalk by more than a factor of two when increasing the reverse bias from -0.1 to -0.5V, keeping the contribution to crosstalk coming from carrier diffusion between 2 and 12% in the mid- and long-wavelength infrared spectrum.
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