4.8 Article

Initialization and read-out of intrinsic spin defects in a van der Waals crystal at room temperature

Journal

NATURE MATERIALS
Volume 19, Issue 5, Pages 540-+

Publisher

NATURE PUBLISHING GROUP
DOI: 10.1038/s41563-020-0619-6

Keywords

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Funding

  1. DFG through the Wurzburg-Dresden Cluster of Excellence on Complexity and Topology in Quantum Matter-ct.qmat [EXC 2147, 39085490, DY18/13-1]
  2. Alexander von Humboldt (AvH) Foundation
  3. RSF [17-72-20053]
  4. Australian Research Council [DP180100077, DP190101058, DE180100810]
  5. Asian Office of Aerospace Research and Development [FA2386-17-1-4064]
  6. Office of Naval Research Global [N62909-18-1-2025]
  7. Humboldt Foundation
  8. Russian Science Foundation [17-72-20053] Funding Source: Russian Science Foundation

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Optically addressable spins in wide-bandgap semiconductors are a promising platform for exploring quantum phenomena. While colour centres in three-dimensional crystals such as diamond and silicon carbide were studied in detail, they were not observed experimentally in two-dimensional (2D) materials. Here, we report spin-dependent processes in the 2D material hexagonal boron nitride (hBN). We identify fluorescence lines associated with a particular defect, the negatively charged boron vacancy (VB-ground state and zero-field splitting of 3.5 GHz. We establish that this centre exhibits optically detected magnetic resonance at room temperature and demonstrate its spin polarization under optical pumping, which leads to optically induced population inversion of the spin ground state-a prerequisite for coherent spin-manipulation schemes. Our results constitute a step forward in establishing 2D hBN as a prime platform for scalable quantum technologies, with potential for spin-based quantum information and sensing applications.

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