Journal
NANOTECHNOLOGY
Volume 31, Issue 16, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab6686
Keywords
Bi2O2Se; high mobility; 2D materials; heterostructure; pulsed laser deposition
Funding
- National Natural Science Foundation of China [11704395, 11227902]
- Natural Science Foundation of Shanghai [17ZR1436300]
- Young Innovative Talents Project for Regular Universities in Guangdong Province [2018KQNCX396]
- 'Strategic Priority Research Program (B)' of the Chinese Academy of Sciences [XDB04010600]
- Superconducting Electronics Facility (SELF) in the Shanghai Institute of Microsystem and Information Technology
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Recently, Bi2O2Se was revealed as a promising two-dimensional (2D) semiconductor for next generation electronics, due to its moderate bandgap size, high electron mobility and pronounced ambient stability. Meanwhile, it has been predicted that high-quality Bi2O2Se-related heterostructures may possess exotic physical phenomena, such as piezoelectricity and topological superconductivity. Herein, we report the first successful heteroepitaxial growth of Bi2O2Se films on SrTiO3 substrates via pulsed laser deposition (PLD) method. Films obtained under optimal conditions show an epitaxial growth with the c axis perpendicular to the film surface and the a and b axes parallel to the substrate. The growth mode transition to three-dimensional (3D) island from quasi-2D layer of the heteroepitaxial Bi2O2Se films on SrTiO3 (001) substrates is observed as prolonging deposition time of films. The maximum value of electron mobility reaches 160 cm(2) V-1 s(-1) at room temperature in a 70 nm thick film. The thickness dependent mobility provides evidence that interface-scattering is likely to be the limiting factor for the relatively low electron mobility at low temperature, implying that the interface engineering as an effective method to tune the low temperature electron mobility. Our work suggests the epitaxial Bi2O2Se films grown by PLD are promising for both fundamental study and practical applications.
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