Journal
NANO LETTERS
Volume 20, Issue 1, Pages 158-165Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b03517
Keywords
Excitons; 2D nanostructures; gallium nitride; photoluminescence; DFT calculation
Categories
Funding
- Russian Foundation for Basic Research [19-52-12057]
- Russian Science Foundation [19-72-30040]
- Government of the Russian Federation (Ioffe Institute) [14.W03.31.0011]
- RF [MK-1576.2019.2]
- Basis Foundation
- Deutsche Forschungsgemeinschaft [409810106, C1]
- Russian Science Foundation [19-72-30040] Funding Source: Russian Science Foundation
Ask authors/readers for more resources
Fascinating optical properties governed by extremely confined excitons have been so far observed in 2D crystals like monolayers of transition metal dichalcogenides. These materials, however, are limited for production by epitaxial methods. Besides, they are not suitable for the development of optoelectronics for the challenging deep-ultraviolet spectral range. Here, we present a single monolayer of GaN in AlN as a heterostructure fabricated by molecular beam epitaxy, which provides extreme 2D confinement of excitons, being ideally suited for light generation in the deep-ultraviolet. Optical studies in the samples, supplemented by a group-theory analysis and first-principle calculations, make evident a giant enhancement of the splitting between the dark and bright excitons due to short-range electron-hole exchange interaction that is a fingerprint of the strongly confined excitons. The practical significance of our results is in the observation of the internal quantum yield of the room-temperature excitonic emission as high as similar to 7.5% at 235 nm.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available