Journal
NANO LETTERS
Volume 20, Issue 2, Pages 1461-1467Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b05272
Keywords
MoTe2; 2D materials; resistive memory; bipolar switching; scanning thermal microscopy; localized heating
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Funding
- National Science Foundation (NSF), NNCI award [1542152]
- Stanford Nonvolatile Memory Technology Research Initiative (NMTRI)
- NSF EFRI 2-DARE grant [1542883]
- National Defense Science and Engineering Graduate (NDSEG)
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Two-dimensional (2D) materials have recently been incorporated into resistive memory devices because of their atomically thin nature, but their switching mechanism is not yet well understood. Here we study bipolar switching in MoTe2-based resistive memory of varying thickness and electrode area. Using scanning thermal microscopy (SThM), we map the surface temperature of the devices under bias, revealing clear evidence of localized heating at conductive plugs formed during switching. The SThM measurements are correlated to electro-thermal simulations, yielding a range of plug diameters (250 to 350 nm) and temperatures at constant bias and during switching. Transmission electron microscopy images reveal these plugs result from atomic migration between electrodes, which is a thermally-activated process. However, the initial forming may be caused by defect generation or Te migration within the MoTe2. This study provides the first thermal and localized switching insights into the operation of such resistive memory and demonstrates a thermal microscopy technique that can be applied to a wide variety of traditional and emerging memory devices.
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