Noise behavior of ferro electric tunnel FET

In this paper the noise behavior of ferroelectric TFET is explored for the first time. The effect of ferro-thickness, gate length, buffer type, and buffer thickness on current noise power spectral Density (SID) and voltage noise power spectral Density (SVG) along with electrical parameters such as memory window, subthreshold swing along with have been investigated. The normalized SID follows 1/SS2 trend, thus signifies the dominancy of BTBT over TAT in Ferro-TFET. Input referred noise PSD, SVG remains constant for whole range of gate voltage deviating from the nature for conventional MOSFET.Power spectral densities experience a sharp rise for frequency above 0.1 GHz due to dominancy of diffusion over other source of noise.