Improved Resistive Memory Switching of NiOx/MnOx Double Stack

Several characteristics are required to improve the switching characteristics of unipolar MnOx memory cell. One of the most important memory characteristics is the switching dispersion, which in turn improves the endurance. The double layer of NiOx/MnOx was used to obtain improved memory characteristics over MnOx single layer. In this paper, we not only improved the dispersion of the MnOx memory cell using the double layers, but also enhanced the switching cycles to 100,000 times. In addition, we discussed what mechanism enhances the memory characteristics and results in a stable memory.