Journal
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
Volume 39, Issue 16, Pages 5156-5166Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.jeurceramsoc.2019.08.024
Keywords
Boron carbide; Arc melting; Si/B co-doping; Stress-induced amorphization; Transmission electron microscopy
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Funding
- Army Research Laboratory [W911NF-12-2-0022]
- Defense Advanced Research Projects [W31P4Q-13-1-000]
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Boron carbide undergoes stress-induced amorphization when subjected to large non-hydrostatic stresses that exceed its elastic limit. This has been proposed as the source for the abrupt loss of shear strength in boron carbide which limits its engineering applications. Si/B co-doping was suggested as one of the means to suppress stress induced amorphization but this has not been experimentally verified. Here, by utilizing arc melting, we prepared Si/B co-doped boron carbide with increased Si content as compared to conventional methods. Through Raman analysis in conjunction with indention and elemental analyses based on SEM and STEM (zeta-factor microanalysis), it is suggested that Si/B co-doping is a promising avenue for suppressing stress-induced amorphization. A comprehensive characterization of microstructure, chemistry, and structural change of boron carbide as a result of Si/B co-doping was elucidated.
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