Journal
JOURNAL OF RAMAN SPECTROSCOPY
Volume 51, Issue 6, Pages 989-996Publisher
WILEY
DOI: 10.1002/jrs.5860
Keywords
Germanium; temperature-dependent; strain; phonon coefficient; epitaxial layers; HR-XRD
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Funding
- Horizon 2020 Framework Programme [766719]
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We investigate the temperature dependence of the Ge Raman mode strain-phonon coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature-dependent evolution of both the Raman Ge& x2500;Ge line and of the Ge lattice strain, we obtain a linear dependence of the strain-phonon coefficient as a function of temperature. Our findings provide an efficient method for capturing the temperature-dependent strain relaxation mechanism in heteroepitaxial systems. Furthermore, we show that the rather large variability reported in the literature for the strain-phonon coefficient values might be due to the local heating of the sample due to the excitation laser used in mu-Raman experiments.
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