4.6 Article

Phase change induced active metasurface devices for dynamic wavefront control

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 53, Issue 20, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab7560

Keywords

nanoplasmonics and photonics; active metasurfaces; phase change medium

Funding

  1. Croucher Foundation [CAS18EG01]
  2. Opening Project of the State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optoelectronics, Chinese Academy of Sciences (CAS)
  3. Opening Project of Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, CAS
  4. Guangdong Province Science and Technology Projects [2015A010103004, 2015A030310342]
  5. Pearl River Nova Program of Guangzhou [201710010058]
  6. Fundamental Research Funds for the Central Universities of South China University of Technology [2018MS16]

Ask authors/readers for more resources

Plasmonic metasurfaces act as appealing platforms for flexible and accurate wave regulation, but their functionalities in wavefront or spectral tuning are settled upon manufactured. So the ability to dynamically tailor the amplitude, phase or polarization is highly desirable for many scenarios of micro & nano photonics and the integrated optoelectronics. Here, one type of plasmonic metasurface devices for active wavefront control is demonstrated in the mid-infrared regime. Fundamentally, the switchable and tunable lensing is exemplified by phase change of refractive index and the generalized Snell's law as well as the Pancharatnam-Berry phase. As a proof of concept, the metal-insulator (MI) and metal-insulator-metal (MIM) architectures are employed with the phase change medium and an optimized energy conversion efficiency of cross polarization. In a wide spectral range between 2.8 mu m and 3.8 mu m, the reflective beam focuses with a cross-polarization efficiency of 80% in the amorphous state, but defocuses in the crystalline state with zero cross-polarization, i.e. the 'on' and 'off' states of the metalens. Further, both device architectures show tunable focal length from 4.4 mu m to 4.8 mu m (MI) and 3.4 mu m and 3.6 mu m (MIM) respectively upon switching between the two states. As a result, our scheme potentially paves a way to flexibly construct the active photonic devices for the reconfigurable wavefront engineering in integrated optoelectronics, i.e. beam switch, tunable steering and lensing, etc.

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