Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 11, Issue 3, Pages 960-967Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b03567
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Funding
- National Natural Foundation of China [61922028, 61874039, 61735004, 11774078, 11804077]
- Key Project of National Natural Science Foundation of China [U1604261]
- Innovation Research Team of Science and Technology in Henan Province [20IRTSTHN020]
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InP quantum dots (QDs) are considered as one of the most promising candidates of Cd- or Pb-based QDs in the applications of display and lighting. However, the performances of blue InP QDs and the corresponding light emitting devices (LEDs) are far inferior to those of their red and green counterparts, which strongly limits the development of InP QD based LEDs (QLEDs) technology. Here, high quantum yield (similar to 81%) and large size (similar to 7.0 +/- 0.9 nm) InP/GaP/ZnS//ZnS QDs with a thick shell have been successfully synthesized by a shell engineering approach, and the corresponding QLEDs exhibit a record brightness and external quantum efficiency of 3120 cd.m(-2) and 1.01%, respectively. Large-scale density functional theory calculations on thousands-of-atoms QDs indicate that thicker-shell ones favor a more balanced carrier injection in the QD film and simultaneously suppress the FRET between closely packed QDs, which collectively contribute to the improved blue device performances.
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