Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 11, Issue 2, Pages 463-470Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.9b03181
Keywords
-
Categories
Funding
- Nanyang Technological University [M4080514]
- JSPS-NTU [M4082176]
- Ministry of Education [RG173/16, MOE2015-T2-2-015, MOE2016-T2-1-034, MOE2017-T2-1-110]
- Singapore National Research Foundation through the NRF Investigatorship Programme [NRF-NRFI-2018-04]
- Ministerio de Ciencia, Innovacion y Universidades of Spain [MAT2016-76892-C3-1-R]
- MICINN [RYC-201416809]
- University Jaume I [UJI-B2017-32]
Ask authors/readers for more resources
Ion migration, one origin of current-voltage hysteresis, is the bane of halide perovskite optoelectronics. Herein, we leverage this unwelcome trait to unlock new opportunities for resistive switching using layered Ruddlesdsen-Popper perovskites (RPPs) and explicate the underlying mechanisms. The ON/OFF ratio of RPP-based devices is strongly dependent on the layers and peaks at (n) over bar = 5, demonstrating the highest ON/OFF ratio of similar to 10(4) and minimal operation voltage in 1.0 mm(2) devices. Long data retention even in 60% relative humidity and stable write/erase capabilities exemplify their potential for memory applications. Impedance spectroscopy reveals a chemical reaction between migrating ions and the external contacts to modify the charge transfer barrier at the interface to control the resistive states. Our findings explore a new family of facile materials and the necessity of ionic population, migration, and their reactivity with external contacts in devices for switching and memory applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available