Journal
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
Volume 28, Issue 6, Pages 997-1004Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2019.2943403
Keywords
HEMTs; Aluminum gallium nitride; Wide band gap semiconductors; Logic gates; Temperature measurement; Heating systems; Temperature sensors; GaN; HEMT; micro-heater; WO; NO sensor
Categories
Funding
- Beijing Delft Institute of Intelligent Science and Technology
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We developed an AlGaN/GaN high electron mobility transistor (HEMT) sensor with a tungsten trioxide (WO3) nano-film modified gate for nitrogen dioxide (NO2) detection. The device has a suspended circular membrane structure and an integrated micro-heater. The thermal characteristic of the Platinum (Pt) micro-heater and the HEMT self-heating are studied and modeled. A significant detection is observed for exposure to a low concentration of 100 ppb NO2 /N-2 at 300 C. For a 1 ppm NO2 gas, a high sensitivity of 1.1 with a response (recovery) time of 88 second (132 second) is obtained. The effects of relative humidity and temperature on the gas sensor response properties in air are also studied. Based on the excellent sensing performance and inherent advantages of low power consumption, the investigated sensor provides a viable alternative high performance NO (2) sensing applications. It is suitable for continuous environmental monitoring system or high temperature applications.
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