Dielectric property and energy-storage performance of (1-x)PbTiO3-xBi(Mg0.5Zr0.5)O3 relaxor ferroelectric thin films

Relaxor ferroelectric materials stand out in pulse power devices for their excellent energy-storage performance. Here, Bi(Mg0.5Zr0.5)O-3 (BMZ)-modified PbTiO3 (PT) relaxor ferroelectric thin films were prepared on LaNiO3(LNO)(100)/Pt(111)/TiO2/SiO2/Si substrates. (1-x)PbTiO3-xBi(Mg0.5Ti0.5)O-3 thin films possess prominent increasing relaxor behavior with increasing of BMZ content, which is conducive to obtaining large polarization difference (P-max - P-r). Meanwhile, Mg2+ and Zr4+ are beneficial to reduce leakage current density and increase breakdown field strength (BDS). Therefore, 0.6PT-0.4BMZ thin films simultaneously exhibit a high recoverable energy-storage density (W-rec) of 32.3 J/cm(3) and a large energy-storage efficiency (eta) of 51.4%. In addition, 0.6PT-0.4BMZ film shows favorable frequency (100 Hz-5 kHz) and temperature (25-130 degrees C) stability in energy-storage density, and change rate of both is below 5% within measurement range. This work highlights (1 - x)PT - xBMZ composites as promising materials in energy-storage fields.