Journal
JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 38, Issue 2, Pages 226-232Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2019.2934763
Keywords
Optical switches; Silicon compounds; Silicon; Optical waveguides; Couplers; Insertion loss; Optical switches; photonic integrated circuits; silicon photonics; optical fiber coupling; strictly-non-blocking switches
Funding
- Project for Developing Innovation Systems of MEXT, Japan
- CREST, JST [JPMJCR15N6]
- TIA Super Clean Room of the National Institute of Advanced Industrial Science and Technology (AIST)
Ask authors/readers for more resources
We fabricate and characterize a polarization-diversity 32 x 32 silicon photonics switch by newly introducing SiN overpass waveguides onto our nonduplicate polarization-diversity path-independent insertion-loss switch. The SiN overpass waveguides are used to simplify the optical paths with a uniform path length between the edge couplers and the switch matrix and significantly reduce the number of waveguide intersections. The switch chip is fabricated using a 300-mm silicon-on-insulator wafer pilot line. The fabricated switch comprises more than 7,600 components, making this the largest ever complementary-metal-oxide-semiconductor-based silicon photonics circuit. The switch chip is electrically and optically packaged and evaluated for a sampled port connection with 32 paths, with an average on-chip loss of similar to 35 dB and an average polarization-dependent loss of 3.2 dB where 75% of the measured paths exhibit a loss of less than 3 dB. The differential group delay is measured to be 1.7 ps. The performance can be further improved by optimizing the device design.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available