CsPbBrCl2/g-C3N4 type II heterojunction as efficient visible range photocatalyst

Photocatalytic activity of low band gap semiconductor largely restrained by high recombination rate of photogenerated charge carriers. To enhance the catalytic performance numerous protocols were adopted amongst which designing of novel hybrid via coupling of semiconductors are very intriguing from modest application point of view. Here, we report facile realization of type II heterojunctions embracing polymeric graphitic carbon nitride (g-C3N4/GCN) and all-inorganic cesium lead halide perovskite (CsPbBrCl2) for degradation complex organic effluents under visible-light illumination. Synthesized hybrid presented much improved performance in toxic cationic and anionic dyes degradation as compared to individual building units. Signature of favorable staggered gap junction's formation at interface was confirmed via Mott-Schottky analysis. Such kind of junctions delay the recombination of photogenerated electron holes and facilitates active radical generation at catalyst surface thereby ensures improved photocatalytic performance. Charge transfer process in heterojunction further illustrated via Density functional theory (DFT) based calculations. Several scavenger tests have been performed to examine the impact of different active radicals in the photocatalysis which suggests manifold performance improvement in the presence of very small concentrations of EDTA. A plausible photocatalytic mechanism in accordance with the type II junction has been proposed.