Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 815, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2019.152404
Keywords
Chemical vapor deposition; Negative bias stress; Positive bias stress; Phototransistor; MAPbI(3); Grain boundary
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Funding
- MOTIE (Ministry of Trade, Industry Energy) [10051403]
- KDRC (Korea Display Research Corporation)
- National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2019R1I1A2A01064153]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10051403] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In this study, the properties of methyl ammonium lead iodide (MAPbI(3)) hybrid organic-inorganic perovskite films grown by spin-coating and chemical vapor deposition (CVD) method were examined and compared. Atomic force microscopy analyses indicate that the CVD-grown MAPbI(3) films exhibit a smoother surface compared to their spin-coated counterparts. Phototransistors incorporating CVD-grown MAPbI(3) as the active layer exhibit superior electrical characteristics, with field effect mobility values higher by approximately one order of magnitude. The degradation of phototransistors under negative bias stress (NBS) and positive bias stress (PBS) in the presence of illumination was evaluated and discussed based on the charge trapping mechanism. (C) 2019 Published by Elsevier B.V.
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