Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 59, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1347-4065/ab6f2c
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The width dependences of characteristics of gate-all-around (GAA) polycrystalline silicon (poly-Si) transistors with 10 nm scale width were systematically investigated. The fabricated 14 nm wide GAA multi-channel poly-Si transistors exhibited excellent electrical properties including small subthreshold swing (105 mV/decade) and high I-on/I-off ratio (similar to 10(8)). Drain current normalized to effective width increases with decreasing nanowire width. It is found by the advanced split capacitance-voltage technique that both inversion carrier density and mobility are enhanced in the narrower nanowires and that the corner effect plays an important role in the drain current enhancement. (C) 2020 The Japan Society of Applied Physics
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