Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 67, Issue 1, Pages 22-28Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2019.2955922
Keywords
Degradation; diode; heavy ion; MOSFET; power; silicon carbide (SiC); single-event burnout (SEB)
Funding
- National Aeronautics and Space Administration (NASA) Early Stage Innovation (ESI) Program [NNX17AD09G]
- NASA Goddard through the NASA Electronic Parts and Packaging Program (NEPP)
- University of Jyvaskyla through the European Space Agency/European Space Research and Technology Centre (ESA/ESTEC) Program [4000111630/14/NL/PA]
- Academy of Finland [2513553]
- NASA [1003281, NNX17AD09G] Funding Source: Federal RePORTER
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Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage current degradation in both devices. This mechanism, based on ion-induced, highly localized energy pulses, is demonstrated in simulations and shown to be capable of causing degradation and SEB for both the MOSFETs and JBS diodes.
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