Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 67, Issue 1, Pages 135-139Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2019.2947866
Keywords
Schottky diodes; silicon carbide (SiC); single-event effects; vertical metal oxide semiconductor field-effect transistor (MOSFET)
Funding
- Early Stage Innovations Grant from NASA's Space Technology Research Grant Program [NNX17AD09G]
- NASA Electronic Parts and Packaging Program
- NASA Phase II SBIR
- CFD Research Corporation (CFDRC) [2016052]
- NASA [NNX17AD09G, 1003281] Funding Source: Federal RePORTER
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The onset of ion-induced reverse leakage current in SiC Schottky diodes is shown to depend on material properties, ion linear energy transfer (LET), and bias during irradiation, but not the voltage rating of the parts. This is demonstrated experimentally for devices from multiple manufacturers with voltage ratings from 600 to 1700 V. Using a device with a higher breakdown voltage than required in the application does not provide increased robustness related to leakage current degradation, compared to using a device with a lower voltage rating.
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