4.4 Article

Simulations on the Effect of Magnetic Anisotropy on Switching of an Easy Cone Magnetized Free Layer

Journal

IEEE TRANSACTIONS ON MAGNETICS
Volume 56, Issue 3, Pages -

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMAG.2019.2942339

Keywords

Cone state; magnetic anisotropy; magnetic random access memory; voltage-controlled magnetization switching

Funding

  1. Ministry of Education, Culture, Sports, Science and Technology [18H01862]
  2. Grants-in-Aid for Scientific Research [18H01862] Funding Source: KAKEN

Ask authors/readers for more resources

The easy cone state of magnetization that arises as a result of a competition between the second- and fourth-order perpendicular magnetic anisotropies has the advantage of a non-zero electric-field torque without the application of a bias magnetic field and is thus a potential candidate for purely voltage-driven magnetic storage devices. In this article, the onset of the easy cone state of magnetization is simulated in a ferromagnet film. Subsequently, the switching field and time for voltage-controlled magnetization switching process are studied as a function of the inclination angle of the easy cone state from the film normal in the range of 0 degrees-45 degrees. The switching field is found to decrease with decreasing anisotropy. The switching time is found to become faster for higher inclination angle of the easy cone state due to an increase in its torque.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available