Journal
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
Volume 68, Issue 12, Pages 4864-4875Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TIM.2019.2900144
Keywords
Semiconductor device measurement; Insulated gate bipolar transistors; Temperature measurement; Semiconductor device modeling; Transient analysis; Impedance; Compact thermal model; IGBT modules; measurement methods; thermal phenomena; transient thermal impedance
Funding
- Polish science budget resources in 2017-2021 through the Investigation Project
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In this paper, the problem of how to describe the thermal properties of the insulated-gate bipolar transistor (IGBT) module with the use of the compact thermal model is considered. This model makes it possible to calculate internal temperature of every semiconductor device included in this module with self-heating phenomena and mutual thermal couplings between these devices taken into account. A new method of measuring parameters of the thermal model of devices contained in the considered module is proposed, and the accuracy of this method is discussed. Some results of measurements of the considered parameters are presented, and uneven distribution of temperature in the investigated module in selected conditions of its power supply is evaluated. Differences between the measured waveforms of the internal temperature of components of the IGBT module and its casings are discussed.
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