Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 3, Pages 1171-1175Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2968358
Keywords
GaN; reactive sputtering; Schottky barrier diode (SBD); temperature sensor; TiN
Funding
- National Key Research and Development Program [2017YFB0403000]
- Open Project of State Key Laboratory of Superhard Materials, Jilin University [201906]
- Fundamental Research Funds for the Central Universities [18lgpy22]
Ask authors/readers for more resources
TiN/GaN Schottky barrier diodes with different anode diameters are fabricated to investigate the temperature sensing mechanism. All the circular diodes present good stability over a temperature range of 25 degrees C-200 degrees C. In the fully turn-on region, the sensitivity increases with the increasing diameter. Furthermore, the highest sensitivity of 1.22 mV/K is obtained for a 300-mu m-diameter device at current of 20 mA, taking into account the series resistance. In the subthreshold region, the forward current (I-D) density determines the sensor sensitivity, in which a larger current density corresponds to a lower sensitivity. In addition, the strong dependence of the leakage current on the temperature indicates that the linearity of ln (I-r) versus temperature can be also used for sensor applications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available