Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 3, Pages 1293-1296Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.2967401
Keywords
Digital comparator; in-memory computing; memristor; multivalued
Funding
- National Key Research and Development Plan of MOST of China [2016YFA0203800]
- National Natural Science Foundation of China [61874164, 61841404, 51732003, 61674061]
- National Defense Advanced Research Program [31513040304]
- Hubei Engineering Research Center on Microelectronics
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In-memory computing based on multivalued memristive device opens the vision of building computing system with less resource and high performance. In this article, we achieved three distinguishable resistance states in mature one-transistor-one-resistor (1T1R) memristor. Furthermore, based on a single multivalued 1T1R device, for the first time, we successfully demonstrated an area-efficient in-memory digital comparator, which will cost five logic gates in complementary metal oxide semiconductor (CMOS) approach. The method is also easily expanded to multibit. Our work could be a representative of using multivalued nonvolatile memory device in digital information processing with improved performance.
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