Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 12, Pages 5284-5288Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2950914
Keywords
Junctions; Thermal stability; Germanium; MOSFET; Schottky barriers; Nickel; Dopant segregation (DS); NiGe; thermal stability
Funding
- Zhejiang Provincial Natural Science Foundation of China [LR18F040001]
- Fundamental Research Funds for the Central Universities
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The thermal stability has been investigated for the NiGe-n-Ge junctions with and without the dopant segregation (DS). It is found that the B DS sufficiently improves the thermal tolerance of the NiGe-n-Ge junctions, and the DS NiGe-n-Ge junctions can be stabilized up to 550 C. This phenomenon suggests that the DS NiGe metal source/drain (S/D) is a feasible structure for broadening the processing window of future high-performance Ge MOSFETs.
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