Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 56, Issue 1, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2019.2957584
Keywords
Deep UV photodetector; honeycomb; hydrothermal growth; nanostructures; ZnO
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Funding
- University Grants Commission (UGC), India [3526/(NET-DEC)]
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This work is focused on the development of reliable and high-performance ZnO based deep UV (UV-C) photodetectors. Herein, hydrothermally synthesized ZnO honeycomb nanostructures were utilized to develop a high sensitivity UV-C photodetector. A systematic analysis of the device performance and stability in deep UV (250 nm) radiations has been performed. The as-synthesized device has shown high sensitivity of 2.4 x 10(5) and responsivity of 597 A/W, at 20 V applied bias. Further, we have demonstrated that the coating of Pt nanoparticles over ZnO nanostructures could significantly improve not only the device stability but also the response speed and device endurance in deep UV radiations. The proposed device is a promising contender for future deep UV detector based optoelectronic products.
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