Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 2, Pages 220-223Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2963428
Keywords
GaN; superlattice; FinFET; high ION; hole channel
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Funding
- Semiconductor Research Corporation (SRC)
- Defense Advanced Research Projects Agency (DARPA) through Applications and Systems driven Center for Energy-Efficient Integrated NanoTechnologies (ASCENT)
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In this letter, we report on the demonstration of a Mg-doped GaN/Al0.2Ga0.8N superlattice (SL) based depletion mode p-channel FinFET to improve the on current (I-ON). A two-step approach involving a dry etch followed by a Tetramethylammonium hydroxide (TMAH) wet etch was employed to obtain fins with minimum width of 50 nm using optical lithography. Normalizing current with fin height, an I-ON of 52 mA/mm and 110 mA/mm were achieved for 80 and 105 nm wide fins respectively.
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