Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 3, Pages 445-448Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2020.2969683
Keywords
Silicon carbide; super-junction; JFET
Categories
Funding
- National Key Research and Development Program of China [2018YFB0905700]
- National Natural Science Foundation of China [U1766222, 51777187]
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The silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process. The fabricated super-junction JFET achieves a breakdown voltage of 1000V with specific on-resistance of 1.3 m Omega.cm(2).The threshold voltage (V-th is stable over a wide range of temperature with less than 0.2V shift from 25 degrees C to 175 degrees C. These results demonstrate that the trench-etching and sidewall-implantation technology is a promising option to fabricate SiC super-junction devices. These devices could have great potential for future power electronics.
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