4H-SiC Super-Junction JFET: Design and Experimental Demonstration

The silicon carbide (SiC) super-junction JFET was designed, simulated and fabricated through trench-etching and sidewall-implantation technology, which avoids the expensive epi-regrowth process. The fabricated super-junction JFET achieves a breakdown voltage of 1000V with specific on-resistance of 1.3 m Omega.cm(2).The threshold voltage (V-th is stable over a wide range of temperature with less than 0.2V shift from 25 degrees C to 175 degrees C. These results demonstrate that the trench-etching and sidewall-implantation technology is a promising option to fabricate SiC super-junction devices. These devices could have great potential for future power electronics.