Journal
IEEE ELECTRON DEVICE LETTERS
Volume 41, Issue 1, Pages 107-110Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2953559
Keywords
Ga2O3; schottky diodes; power semiconductor devices; HVPE; wide band gap semiconductors; MIS devices
Categories
Funding
- NSF DMREF Program [1534303]
- Air Force Office of Scientific Research (AFOSR) [FA9550-17-1-0048, FA9550-18-1-0529, FA9550-18-1-0479]
- NSF [NNCI-1542081]
- NSF MRSEC Program [DMR-1719875]
- NSF MRI program [DMR-1338010]
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We report the realization of field-plated vertical Ga2O3 trench Schottky barrier diodes (SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With employment of field plate, a breakdown voltage (BV) of 2.89 kV is achieved, which is similar to 500 V higher than those without field plate. Trench sidewall depletion is observed, and the average depletion width is extracted using an analytical model. The trench SBDs have a differential specific on-resistance(R-on,R-sp) of 10.5 (8.8) m Omega.cm(2) from DC (pulsed) measurements, which leads to a Baliga's figure-of-merit (BV2/R-on,R-sp) of 0.80 (0.95) GW/cm(2) - the highest among Ga2O3 power devices to date.
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