Synthesis of a Novel Rocksalt-Type Ternary Nitride Semiconductor MgSnN2 Using the Metathesis Reaction Under High Pressure

Novel ternary nitride semiconductor MgSnN2 was synthesized using the metathesis reaction under high pressure (P = 5.5 GPa/T = 850 degrees C/1 h). MgSnN2 obtained in this study showed a rocksalt structure, although we have reported that ZnSnN2 synthesized using a similar method has a wurtzite structure. The (111) plane of MgSnN2 with a rocksalt structure is expected to match well with GaN (0001). The band gap of MgSnN2 is estimated to be 2.3 eV and it shows a distinct cathodoluminescence peak at room temperature. MgSnN2 can find potential use in photovoltaic absorber, in the emitting layer of a light-emitting device, and photocatalyst or opaque pigment because the elements composing MgSnN2 are nontoxic and earth-abundant. MgSnN2 powder synthesized in this study showed excellent crystallinity, proving that metathesis reaction under high pressure is a superior method for synthesizing novel multicomponent nitrides.