Journal
DIAMOND AND RELATED MATERIALS
Volume 105, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2020.107768
Keywords
Iridium; Diamond Heteroepitaxy; Interfaces; Schottky diodes
Categories
Funding
- French ANR agency through the DIAMWAFEL project [ANR-15-CE08-0034]
- DGA through the DIAMWAFEL project [ANR-15-CE08-0034]
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Advanced characterizations with combined analytical tools were carried out at the different stages of diamond heteroepitaxy on Ir/STO/Si (001) substrates. HRTEM and STEM-EELS revealed the presence of epitaxial nanometric diamond crystals after bias enhanced nucleation. UV Raman allowed estimating the diamond film quality and its strain at the early stages of heteroepitaxial growth. The crystalline structure and the strain within thick heteroepitaxial films were determined by XRD and CL investigations. A CL study of the cross-section provided the mapping of the dislocation network along the growth direction. Measurements performed on lateral Schottky diodes fabricated on a thick diamond film showed an excellent reproducibility on the substrate with a Schottky barrier height in good agreement with those obtained on homoepitaxial layers.
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