4.5 Article

Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles

Journal

CHINESE PHYSICS B
Volume 29, Issue 3, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/ab6c4c

Keywords

N-; P-; As-doped SiC nanowires; transport properties; first-principles theory

Funding

  1. National Natural Science Foundation of China [11574261]
  2. Natural Science Foundation of Hebei Province, China [A2015203261]

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According to the one-dimensional quantum state distribution, carrier scattering, and fixed range hopping model, the structural stability and electron transport properties of N-, P-, and As-doped SiC nanowires (N-SiCNWs, P-SiCNWs, and As-SiCNWs) are simulated by using the first principles calculations. The results show that the lattice structure of N-SiCNWs is the most stable in the lattice structures of the above three kinds of doped SiCNWs. At room temperature, for unpassivated SiCNWs, the doping effect of P and As are better than that of N. After passivation, the conductivities of all doped SiCNWs increase by approximately two orders of magnitude. The N-SiCNW has the lowest conductivity. In addition, the N-, P-, As-doped SiCNWs before and after passivation have the same conductivity-temperature characteristics, that is, above room temperature, the conductivity values of the doped SiCNWs all increase with temperature increasing. These results contribute to the electronic application of nanodevices.

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