4.6 Article

Facile synthesis of ZnS quantum dots at room temperature for ultra-violet photodetector applications

Journal

CHEMICAL PHYSICS LETTERS
Volume 742, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.cplett.2020.137127

Keywords

Semiconductor Quantum dots (QDs); Zinc sulfide (ZnS); Optical property photodetector

Funding

  1. National Natural Science Foundation of China [61106098]
  2. Equipment Pre-research Fund under the Equipment Development Department (EDD) of China's Central Military Commission (CMC) [1422030209]
  3. Innovation Team Program of NORINCO Group [2017CX024]
  4. Yunnan Key Laboratory of Advanced Photoelectric Materials Devices [2019DG014]

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Zinc sulfide (ZnS) quantum dots (QDs) were synthesized using a facile, low-cost and environmentally friendly method at room temperature and ambient pressure. The structural, optical and electrical properties of the asprepared ZnS QDs were investigated. The monodispersed crystalline ZnS QDs with an average size of 3.8 nm has been prepared, an absorption peak at 292 nm in the ultra-violet (UV) range was observed. The maximum responsivity (R) and detectivity (D*) of the ZnS QDs based photodetector under 365 nm UV light illumination were 5.8 A W-1 and 1.97 x 10(13) Jones, respectively, which shows important potential application in UV detection.

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