Enhanced photoluminescence properties of Ga-doped V2O5 nanorods via defect structures

Ga-doped V2O5 nanorods were fabricated by thermal evaporation at 850 degrees C using the V-S mechanism. XRD and XPS reveal that the Ga was doped into the V2O5 crystal structures and that a Ga-O phase was formed. HRTEM revealed the growth of Ga-free and Ga-doped nanorods in the [1 1 0] direction. Photoluminescence properties indicated that Ga at 0.5 wt% increased the luminescence intensities at 1.77 and 1.94 eV by factors of 1.65 and 1.82, whereas Ga > 1 wt% reduced the intensities. These results suggest that the interstitial Ga and Ga-O phases influence the photoluminescence properties of V2O5 nanorods.