Journal
CERAMICS INTERNATIONAL
Volume 46, Issue 9, Pages 13025-13032Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.02.072
Keywords
Oxide semiconductor; Wide band gap; Spinel oxide; Point defect; Metal gallate
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Funding
- Scientific and Technological Research Council of Turkey (TUBITAK) [117F156]
- Scientific Research Projects Coordination Unit of Istanbul University [BEK-2017-24747]
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We mainly focused on synthesis of boron doped cobalt gallium oxide (B doped CoGa2O4) nanoparticles. In the study, varied amount of B doped CoGa2O4 nanopowders were produced employing Sol-Gel technique. The structural characterizations of the particles were performed using x-ray powder diffractometer (XRD) and x-ray photoelectron spectroscopy (XPS) measurements. Rietveld refinements were utilized to investigate B atom replacement and thus, the changes in lattice parameters. Furthermore, the reflectance and absorbance performances were measured by UV-visible spectrophotometer in order to determine electronic energy level configurations through the band gap. The relationship between crystal structural and formation of electronic energy levels was also investigated according to the locations of substituted B atoms.
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