Journal
CERAMICS INTERNATIONAL
Volume 46, Issue 8, Pages 11978-11987Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2020.01.237
Keywords
AZO films; Magnetron sputtering; The columnar structure; RF power
Categories
Funding
- National Natural Science Foundation of China [51602045]
- National Science Foundation of Liaoning Province [20170540325]
- Natural Science Foundation of Hebei Province [E2017501082]
- basic scientific research business expenses of the central university
- open project of key laboratory for magnetism and magnetic materials of the ministry of education, Lanzhou University [LZUMMM2019012]
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The columnar structure and its formation process have a significant effect on the electrical properties of Al-doped ZnO (AZO) thin film in-situ deposited at room temperature by magnetron sputtering method. The influences of RF power on the formation of the columnar structure and its regular pattern were systematically investigated. The RF power varied from 120 W to 240 W. The best quality AZO sample with the sheet resistance of 6.07 Omega/sq and average transmittance of 83.2% was obtained at 210 W (for 30 min). The analysis of crosses section images indicated that the columnar structure appeared earlier at higher RF power. The thickness at which the columnar structure began to appear didn't fluctuate at a fixed value. Furthermore, high RF power relatively contributed to reduce the thickness. The Drude's model was used for examining the correlation between optical and electrical behaviors, and the theoretical results of electrical properties were well matched with the experimental data. According to the XRD results and XPS analysis, the appearance of Al2O3 may exert a significant influence on the deterioration in electrical properties of the sample deposited at 240 W.
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