Journal
CARBON
Volume 157, Issue -, Pages 578-582Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2019.10.040
Keywords
Graphene; Pseudo-magnetic field; Valley-isospin
Funding
- National Research Foundation of Korea (NRF) [2019R1F1A1051215, 2019R1A5A1012495, 2017R1C1B3004301]
- Korea Institute for Advanced Study (KIAS) grant - Korea government (MSIT)
- [IBS-R024-D1]
- National Research Foundation of Korea [2016R1A5A1008184, IBS-R024-D1-2020-A00, 2017R1C1B3004301, 2019R1F1A1051215] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Graphene's outstanding mechanical properties lend to strain engineering, allowing for future valleytronics and nanoelectromechanic applications. In this work, we have found that a Gaussian-shaped strain on a graphene p-n junction results in quantum Hall conductance oscillations due to the rotated angle between valley isospins at the graphene armchair edges. Furthermore, additional Fano resonances were observed as the value of the strain-induced pseudo-magnetic field approaches that of the external magnetic field. The lifted valley degeneracy, stemming from the interplay between the real and pseudo-magnetic fields, results in clearly valley-resolved Fano resonances. Exploring strain engineering as a means to control conductance through valley isospin manipulation is believed to open the door to potential graphene valleytronic devices. (C) 2019 Elsevier Ltd. All rights reserved.
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