Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5128212
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Funding
- Graduate Program of the Netherlands Organization for Scientific Research (NWO) [022.005.011]
- NWO Zwaartekracht Research Center for the Integrated Nanophotonics Program
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In this paper, an optical switch based on a microelectromechanical phase modulator is presented. Phase tuning is achieved by tuning the vertical gap between two vertically coupled waveguides through the application of a reverse bias on a p-i-n junction. An effective refractive index tuning Delta n(eff) of 0.03 and a phase shift of more than 3 pi rad at telecom wavelengths are measured with an on-chip Mach-Zehnder interferometer (MZI), with a phase-tuning length of only 140 mu m. With a bias voltage of 5.1 V, a half-wave-voltage-length product (V-pi L) of 5.6 x 10(-3) V center dot cm is achieved. Furthermore, optical crossbar switching in a MZI is demonstrated with a 15 dB extinction ratio using an actuation voltage of only 4.2 V. Our work provides a solution to on-chip, low-voltage phase modulation and optical switching. The switch is fabricated on an indium-phosphide membrane on a silicon substrate, which enables the integration with active components (e.g., amplifiers, lasers, and detectors) on a single chip.
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