Journal
APPLIED PHYSICS EXPRESS
Volume 13, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1882-0786/ab6e0f
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Funding
- Japan Society for the Promotion of Science [16H02203]
- Innovative Science and Technology Initiative for Security, ATLA, Japan
- Grants-in-Aid for Scientific Research [16H02203] Funding Source: KAKEN
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We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 mu m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs. (C) 2020 The Japan Society of Applied Physics
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