Journal
ADVANCED MATERIALS
Volume 32, Issue 14, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201908040
Keywords
2D ferroelectrics; dual-gated coupling; nonvolatile memory; programmable rectifiers; van der Waals heterostructures
Categories
Funding
- National Key R&D Program of China [2018YFA0703700, 2016YFA0200700]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB30000000]
- National Natural Science Foundation of China [61625401, 61851403, 11674072, 61804146]
- Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication
- Youth Innovation Promotion Association CAS
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Ferroelectric field-effect transistors (FeFETs) are one of the most interesting ferroelectric devices; however, they, usually suffer from low interface quality. The recently discovered 2D layered ferroelectric materials, combining with the advantages of van der Waals heterostructures (vdWHs), may be promising to fabricate high-quality FeFETs with atomically thin thickness. Here, dual-gated 2D ferroelectric vdWHs are constructed using MoS2, hexagonal boron nitride (h-BN), and CuInP2S6 (CIPS), which act as a high-performance nonvolatile memory and programmable rectifier. It is first noted that the insertion of h-BN and dual-gated coupling device configuration can significantly stabilize and effectively polarize ferroelectric CIPS. Through this design, the device shows a record-high performance with a large memory window, large on/off ratio (10(7)), ultralow programming state current (10(-13) A), and long-time endurance (10(4) s) as nonvolatile memory. As for programmable rectifier, a wide range of gate-tunable rectification behavior is observed. Moreover, the device exhibits a large rectification ratio (3 x 10(5)) with stable retention under the programming state. This demonstrates the promising potential of ferroelectric vdWHs for new multifunctional ferroelectric devices.
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