4.8 Article

Robust Hot Electron and Multiple Topological Insulator States in PtBi2

Journal

ACS NANO
Volume 14, Issue 2, Pages 2366-2372

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b09564

Keywords

topological insulator; 2D materials; scanning tunneling microscopy; edge state; hot electron

Funding

  1. NSFC [11790313, 11674226, 11634009, 11574202, 11874256, 11521404, 11874258, U1632102, 11861161003]
  2. National Basic Research Program of China [2016YFA0300403, 2016YFA0301003]
  3. Shanghai talent program

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A two-dimensional topological insulator features (only) one bulk gap with nontrivial topology, which protects one-dimensional boundary states at the Fermi level. We find a quantum phase of matter beyond this category: a multiple topological insulator. It possesses a ladder of topological gaps; each gap protects a robust edge state. We prove a monolayer of van der Waals material PtBi2 as a two-dimensional multiple topological insulator. By means of scanning tunneling spectroscopy, we directly visualize the one-dimensional hot electron (and hole) channels with nanometer size on the samples. Furthermore, we confirm the topological protection of these channels by directly demonstrating their robustness to variations of crystal orientation, edge geometry, and sample temperature. The discovered topological hot electron materials may be applied as efficient photocatalysts in the future.

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