Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 11, Pages 13473-13480Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b21796
Keywords
UV photodetector; self-driven; organic/inorganic heterojunctions; GaN microwire; PANI
Funding
- National Natural Science Foundation of China [61874161, 11804103]
- Science and Technology Program of Guangdong, Province of China [2017B010127001]
- Guangdong Natural Science Foundation for Distinguished Young Scholars [2018B030306048]
- Education Department Project Foundation Program of Guangdong, Province of China [2017KZDXM002]
- Featured Innovation Projects of Colleges and Universities in Guangdong Province (Natural Science) [2018KTSCX233]
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Independent and zero-maintenance systems would be in urgent need in the near future internet of things. Here, we present high-performance, self-driven organic/inorganic heterojunction ultraviolet (UV) photodetectors (PDs) by in situ polymerization of polyaniline (PANI) on Gallium nitride microwires. The GaN microwires with a high crystalline quality are grown on patterned Si substrates by metal organic chemical vapor deposition. Using a facile in situ chemical polymerization method, PANI is conformally coated on the surface of GaN microwires. The constructed GaN/PANI hybrid microwire PD exhibits a high responsivity of 178 mA/W, a remarkable detectivity of 4.67 x 10(14) jones, and an ultrafast UVphotoresponse speed (rise time of 0.2 ms and fall time of 0.3 ms) under zero bias. The intimate heterojunction in the form of N-Ga-N bonds between GaN and PANI may account for the observed high performances. The presented self-driven microwire UV PDs featuring ultrahigh-speed (sub-millisecond) response to UV light may find applications in future nano/micro-photosensor networks.
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