GeC/GaN vdW Heterojunctions: A Promising Photocatalyst for Overall Water Splitting and Solar Energy Conversion

Two-dimensional van der Waals (vdW) heterojunctions have been regarded as promising candidates for photocatalytic water splitting and solar energy conversion. Here, we propose a two-dimensional GeC/GaN vdW heterostructure, where the GaN monolayer and the GeC monolayer are stacked. The binding energy, phonon spectrum, and elastic constants demonstrate this material's high dynamic and mechanical stability. Most notably, the GW band structure, GW + Bethe-Salpeter equation (BSE) optical absorption spectrum, and the band alignment of the density functional theory (DFT) scheme and empirical formula reveal that the GeC/GaN vdW heterostructures have a dramatically high optical absorption coefficient (similar to 10(5) cm(-1)) in the visible region and a suitable band edge with sufficiently large kinetic overpotentials of the hydrogen evolution reaction (Delta E-c >= 1.945 eV) and the oxygen evolution reaction (Delta E-v >= 1.244 eV). Photogenerated electrons and holes aggregate on the GeC monolayer and GaN monolayer surfaces, respectively, which could make this heterojunction a promising candidate for photocatalytic water splitting and solar energy conversion.