Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 5, Pages 6276-6282Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b19864
Keywords
MoS2; CVD; substitutional doping; DFT calculation; ambipolar
Funding
- National Natural Science Foundation of China [51672246, 51272232]
- National Key Research and Development Program of China [2017YFA0304302]
- Fundamental Research Funds for the Central Universities
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Molybdenum disulfide (MoS2) with excellent properties has been widely reported in recent years. However, it is a great challenge to achieve p-type conductivity in MoS2 because of its native stubborn n-type conductivity. Substitutional transition metal doping has been proved to be an effective approach to tune their intrinsic properties and enhance device performance. Herein, we report the growth of Nb-doping large-area monolayer MoS2 by a one-step salt-assisted chemical vapor deposition method. Electrical measurements indicate that Nb doping suppresses n-type conductivity in MoS2 and shows an ambipolar transport behavior after annealing under the sulfur atmosphere, which highlights the p-type doping effect via NU, corresponding to the density functional theory calculations with Fermi-level shifting to valence band maximum. This work provides a promising approach of two-dimensional materials in electronic and optoelectronic applications.
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