Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 2, Pages 2743-2752Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b20307
Keywords
organic field-effect transistors; donor-acceptor copolymers; floating-gate; flash memory; high-performance; bias stability
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2018R1A2A1A05078734, 2019R1G1A1083936]
- National Research Foundation of Korea [21A20151713274, 2019R1G1A1083936] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Organic flash memories that employ solution processed polymer semiconductors preferentially require internal stability of their active channel layers. In this paper, a series of new donor-acceptor copolymers based on cyclopentadithiophene (CDT) and diketopyrrolopyrrole (DPP) are synthesized to obtain high performance and operational stability of nonvolatile floating-gate memory transistors with various additional donor units including thiophene, thiophene-vinylene-thiophene (CDT-DPP-TVT), selenophene, and selenophene-vinylene-selenophene. Detailed analyses on the photophysical, two-dimensional grazing incident X-ray diffraction, and bias stress stability are discussed, which reveal that the CDT-DPP-TVT exhibits excellent bias stress stability over 10(5) s. To utilize the robust nature of CDT-DPP-TVT, floating-gate transistors are fabricated by embedding Au nanoparticles between Cytop layers as a charge storage site. The resulting memory devices reveal bistable current states with high on/off current ratio larger than 10(4) and each state can be distinguished for more than 1 year, indicating a long retention time. Moreover, repetitive writing-reading-erasing-reading test clearly supports the reproducible memory operation with reversible and reliable electrical responses. All these results suggest that the internal stability of CDT-DPP-TVT makes this copolymer a promising material for application in reliable organic flash memory.
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