Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 6, Pages 7788-7794Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b20844
Keywords
spintronics; spin-orbit torque; spin-Hall effect; topological insulator; chalcogenides
Funding
- Ministry of Science and Technology of Taiwan (MOST) [MOST-105-2112-M-002-007-MY3, MOST-108-2636-M-002-010, MOST-107-3017-F-002-001]
- Center of Atomic Initiative for New Materials (AI-Mat)
- Advanced Research Center of Green Materials Science and Technology, National Taiwan University from the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project, Ministry of Education (MOE) in Taiwan [NTU-108L9008, NTU-108L9006]
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The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of the topologically protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that nonepitaxial BixTe1-x/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such nonepitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these BixTe1-x-based heterostructures with thermally stable ferromagnetic layers, which indicates that such nonepitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.
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