4.8 Article

Lead Acetate Assisted Interface Engineering for Highly Efficient and Stable Perovskite Solar Cells

Journal

ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 6, Pages 7186-7197

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b19691

Keywords

Pb(OAc)(2); top and bottom ways; high efficiency; long-term stability; perovskite solar cells

Funding

  1. Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2013M3A6 B1078874]
  2. New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) from the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea [20193091010110]
  3. National Research Foundation of Korea [22A20131112367] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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High power conversion efficiency (PCE) and long-term stability are inevitable issues faced in practical device applications of perovskite solar cells. In this paper, significant enhancements in the device efficiency and stability are achieved by using a surface-active lead acetate (Pb(OAc)(2)) at the top or bottom of CH3NH3PbI3 (MAPbI(3))-based perovskite. When a saturated Pb(OAc)(2) solution is introduced on the top of the MAPbI(3) perovskite precursor, the OAc- in Pb(OAc)(2) participates in lattice restructuring of MAPbI(3) to form MAPbI(3-x)(OAc)(x), thereby producing a high-quality perovskite film with high crystallinity, large grain sizes, and uniform and pinhole-free morphology. Moreover, when Pb(OAc)(2) solution is mixed in the poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) solution in the bottom way, the OAC(-) in Pb(OAc)(2) improves the water resistance of PEDOT-PSS. As the OAc- easily bonds with the Pb2+, the deposition of MAPbI(3) precursor onto the Pb(OAc)(2) mixed with PEDOT-PSS results in a reduction of the uncoordinated Pb, leading to strong stabilization of the perovskite layer. Both the top- and bottom-treated devices exhibit enhanced PCE values of 18.93% and 18.28%, respectively, compared to the conventional device with a PCE of 16.47%, which originates from decreased trap sites and reduced energy barriers. In particular, the bottom-treated device exhibits long-term stability, with more than 84% of its initial PCE over 800 h in an ambient environment.

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