Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 5, Pages 6037-6047Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b18507
Keywords
p-CuI thin film; n-MgZnO quantum dot; heterojunction; device optimization; violet light-emitting diode
Funding
- Samsung Research Funding & Incubation Center of Samsung Electronics [SRFC-MA1901-01]
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As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal-organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the first time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin film/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin film layer was prepared by an iodination process of Cu films, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 x 1 mm(2)-area pixel fabricated using the p-CuI thin film at the iodination temperature of 15 degrees C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.
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