The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film

Ge0.07GaN films were successfully made on Si (100), SiO2/Si (100) substrates by a radio frequency reactive sputtering technique at various deposition conditions listed as a range of 100-400 degrees C and 90-150 W with a single ceramic target containing 7 at % dopant Ge. The results showed that different RF sputtering power and heating temperature conditions affected the structural, electrical and optical properties of the sputtered Ge0.07GaN films. The as-deposited Ge0.07GaN films had an structural polycrystalline. The GeGaN films had a distorted structure under different growth conditions. The deposited-150 W Ge0.07GaN film exhibited the lowest photoenergy of 2.96 eV, the highest electron concentration of 5.50 x 10(19) cm(-3), a carrier conductivity of 35.2 S.cm(-1) and mobility of 4 cm(2).V-1.s(-1).